EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

R1RW0408DGE-2PI#B0

Description
SRAM 存储器 IC 4Mb(512K x 8) 并联 12 ns 36-SOJ
Categorysemiconductor    memory   
File Size91KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

R1RW0408DGE-2PI#B0 Overview

SRAM 存储器 IC 4Mb(512K x 8) 并联 12 ns 36-SOJ

R1RW0408DGE-2PI#B0 Parametric

Parameter NameAttribute value
category
MakerRenesas Electronics Corporation
series-
PackagePipe fittings
memory typeVolatile
memory formatSRAM
technologySRAM
storage4Mb(512K x 8)
memory interfacein parallel
Write cycle time - words, pages12ns
Voltage - Power supply3V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing36-BSOJ (0.400", 10.16mm wide)
Supplier device packaging36-SOJ
interview time12 ns

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2610  1978  2912  1414  2903  53  40  59  29  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号