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RMLV0816BGSD-4S2#HA1

Description
SRAM 存储器 IC 8Mb(1M x 8,512K x 16) 并联 45 ns 52-TSOP II
Categorysemiconductor    memory   
File Size343KB,16 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RMLV0816BGSD-4S2#HA1 Overview

SRAM 存储器 IC 8Mb(1M x 8,512K x 16) 并联 45 ns 52-TSOP II

RMLV0816BGSD-4S2#HA1 Parametric

Parameter NameAttribute value
category
MakerRenesas Electronics Corporation
series-
PackageTape and Reel (TR)
memory typeVolatile
memory formatSRAM
technologySRAM
storage8Mb(1M x 8,512K x 16)
memory interfacein parallel
Write cycle time - words, pages45ns
Voltage - Power supply2.4V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing52-TFSOP(0.350",8.89mm 宽)
Supplier device packaging52-TSOP II
interview time45 ns
Basic product numberRMLV0816

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