AEC-Q100 with extended temperature range (-55°C to 125°C)
Frequencies between 1 MHz and 110 MHz accurate to 6 decimal
places
Supply voltage of 1.8V or 2.25V to 3.63V
Excellent total frequency stability as low as ±25 ppm
Industry best G-sensitivity of 0.1 PPB/G
Low power consumption of 3.8 mA typical at 1.8V
LVCMOS/LVTTL compatible output
5-pin SOT23-5 package: 2.9 x 2.8 mm x mm
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Automotive, extreme temperature and other high-rel electronics
Infotainment systems, collision detection devices, and in-vehicle
networking
Power train control
Electrical Specifications
Table 1. Electrical Characteristics
[1, 2]
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
1
-25
-30
-50
Operating Temperature Range
(ambient)
T_use
-40
-40
-55
Supply Voltage
Current Consumption
Vdd
Idd
1.62
2.25
–
–
Duty Cycle
Rise/Fall Time
Output High Voltage
DC
Tr, Tf
VOH
45
–
–
90%
Typ.
–
–
–
–
–
–
–
1.8
–
4.0
3.8
–
1.5
1.3
–
Max.
110
+25
+30
+50
+105
+125
+125
1.98
3.63
4.8
4.5
55
3
2.5
–
Unit
MHz
ppm
ppm
ppm
°C
°C
°C
V
V
mA
mA
%
ns
ns
Vdd
Condition
Refer to
Table 13 and Table 14
for a list supported frequencies
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
Frequency Range
Frequency Stability and Aging
Operating Temperature Range
Extended Industrial, AEC-Q100 Grade 2
Automotive, AEC-Q100 Grade 1
Extended Temperature, AEC-Q100
All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V
and 3.3V are supported.
No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V
No load condition, f = 20 MHz, Vdd = 1.8V
All Vdds
Vdd = 2.25V - 3.63V, 20% - 80%
Vdd = 1.8V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Pin 1, OE
Pin 1, OE
Pin 1, OE logic high or logic low
Measured from the time Vdd reaches 90% of final value
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
f = 75 MHz, 2.25V to 3.63V
f = 75 MHz, 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Output Low Voltage
VOL
–
–
10%
Vdd
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedence
Startup Time
Enable/Disable Time
RMS Period Jitter
RMS Phase Jitter (random)
VIH
VIL
Z_in
T_start
T_oe
T_jitt
T_phj
70%
–
–
–
–
–
–
–
–
–
–
100
–
–
1.6
1.9
0.5
1.3
–
30%
–
10
130
Jitter
2.5
3.0
–
–
ps
ps
ps
ps
Vdd
Vdd
k
ms
ns
Startup and Resume Timing
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at
L: output is high impedance. Only output driver is disabled.
Any voltage between 0 and Vdd or Open
[3]
: Specified frequency
output. Pin 3 has no function.
Power supply voltage
Oscillator output
[4]
GND
1
Functionality
Top View
5
OUT
YXXXX
NC
2
OE/NC
3
4
VDD
Figure 1. Pin Assignments
Notes:
3. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 3 is not externally driven. If pin 3 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
N
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
[5]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[6]
Package
SOT23-5
JA, 4 Layer Board
(°C/W)
421
JC, Bottom
(°C/W)
175
Note:
6. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 5. Maximum Operating Junction Temperature
[7]
Max Operating Temperature (ambient)
105°C
125°C
Maximum Operating Junction Temperature
115°C
135°C
Note:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
京公网安备 11010802033920号
EEWORLD
