BCW67BLEADFREE datasheet, PDF - EEWORLD Datasheet

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BCW67BLEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size323KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BCW67BLEADFREE Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BCW67BLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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BCW67 SERIES

BCW68 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCW67 and BCW68

Series types are PNP Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for general purpose

switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Conitinuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

fT

Cc

Ce

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

IBM

PD

TJ, Tstg

Θ

JA

BCW67

45

32

BCW68

60

45

UNITS

V

mA

A

mA

mW

°C

°C/W

UNITS

nA

µA

nA

V

MHz

pF

BCW67C

BCW68H

MIN MAX

80

180

250

630

100

5.0

800

1.0

100

200

350

-65 to +150

357

MAX

20

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=Rated VCEO

VCB= Rated VCEO, TA=150°C

VEB=4.0V

IC=10µA (BCW67)

IC=10µA (BCW68)

IC=10mA (BCW67)

IC=10mA (BCW68)

IE=10µA

IC=100mA, IB=10mA

IC=500mA, IB=50mA

IC=100mA, IB=10mA

IC=500mA, IB=50mA

VCE=5.0V, IC=50mA, f=20MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

otherwise noted)

MIN

TYP

45

60

32

45

5.0

0.3

0.7

1.25

2.0

200

6.0

60

BCW67B

BCW68G

MIN

MAX

50

120

160

400

60

hFE

VCE=10V, IC=100µA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=100mA

VCE=2.0V, IC=500mA

BCW67A

BCW68F

MIN MAX

35

75

100

250

35

R2 (20-November 2009)

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Description	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Cable Assembly	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Reach Compliance Code	compliant	compli	unknown	compliant	compliant	compliant
Is it lead-free?	Lead free	Lead free	-	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	-	3	3	3
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A	-	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	32 V	45 V	-	32 V	45 V	45 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	35	-	100	60	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	-	e3	e3	e3
Humidity sensitivity level	1	1	-	1	1	1
Number of components	1	1	-	1	1	1
Number of terminals	3	3	-	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	-	260	260	260
Polarity/channel type	PNP	PNP	-	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	-	YES	YES	YES
Terminal surface	Matte Tin (Sn)	MATTE TIN (315)	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	-	10	10	10
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	-	200 MHz	200 MHz	200 MHz

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