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VHB40-12S

Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size16KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

VHB40-12S Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4

VHB40-12S Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionPOST/STUD MOUNT, O-CRPM-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)5 A
Collector-based maximum capacity135 pF
Collector-emitter maximum voltage18 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)70 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
VHB40-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB40-12S
is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
Omnigold™
Metalization System
B
ØC
D
H
I
J
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
#8-32 UNC-2A
F
E
G
5.0 A
36 V
18 V
4.0 V
70 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.9
O
C/W
O
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10717
O
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
G
P
η
C
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 28 V
T
C
= 25 C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5.0
UNITS
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
I
C
= 5.0 A
f = 1.0 MHz
P
OUT
= 40 W
f = 175 MHz
20
200
135
8.5
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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