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W632GG8NB12I

Description
SDRAM - DDR3 存储器 IC 2Gb(256M x 8) 并联 800 MHz 20 ns 78-VFBGA(8x10.5)
Categorysemiconductor    memory   
ManufacturerWinbond Electronics Corporation
Websitehttp://www.winbond.com.tw
Environmental Compliance
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W632GG8NB12I Overview

SDRAM - DDR3 存储器 IC 2Gb(256M x 8) 并联 800 MHz 20 ns 78-VFBGA(8x10.5)

W632GG8NB12I Parametric

Parameter NameAttribute value
category
MakerWinbond Electronics Corporation
series-
Packagetray
memory typeVolatile
memory formatDRAM
technologySDRAM - DDR3
storage2Gb(256M x 8)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.425V ~ 1.575V
Operating temperature-40°C ~ 95°C(TC)
Installation typesurface mount type
Package/casing78-VFBGA
Supplier device packaging78-VFBGA(8x10.5)
Clock frequency800 MHz
interview time20 ns
Basic product numberW632GG8

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Index Files: 885  1895  830  1488  1395  18  39  17  30  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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