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W632GG6NB11I

Description
SDRAM - DDR3 存储器 IC 2Gb(128M x 16) 并联 933 MHz 20 ns 96-VFBGA(7.5x13)
Categorysemiconductor    memory   
ManufacturerWinbond Electronics Corporation
Websitehttp://www.winbond.com.tw
Environmental Compliance
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W632GG6NB11I Overview

SDRAM - DDR3 存储器 IC 2Gb(128M x 16) 并联 933 MHz 20 ns 96-VFBGA(7.5x13)

W632GG6NB11I Parametric

Parameter NameAttribute value
category
MakerWinbond Electronics Corporation
series-
Packagetray
memory typeVolatile
memory formatDRAM
technologySDRAM - DDR3
storage2Gb(128M x 16)
memory interfacein parallel
Write cycle time - words, pages15ns
Voltage - Power supply1.425V ~ 1.575V
Operating temperature-40°C ~ 95°C(TC)
Installation typesurface mount type
Package/casing96-VFBGA
Supplier device packaging96-VFBGA(7.5x13)
Clock frequency933 MHz
interview time20 ns
Basic product numberW632GG6

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