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W632GG8MB11J

Description
SDRAM - DDR3 存储器 IC 2Gb(256M x 8) 并联 933 MHz 20 ns 78-VFBGA(8x10.5)
Categorysemiconductor    memory   
ManufacturerWinbond Electronics Corporation
Websitehttp://www.winbond.com.tw
Environmental Compliance
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W632GG8MB11J Overview

SDRAM - DDR3 存储器 IC 2Gb(256M x 8) 并联 933 MHz 20 ns 78-VFBGA(8x10.5)

W632GG8MB11J Parametric

Parameter NameAttribute value
category
MakerWinbond Electronics Corporation
series-
Packagetray
memory typeVolatile
memory formatDRAM
technologySDRAM - DDR3
storage2Gb(256M x 8)
memory interfacein parallel
Clock frequency933 MHz
Write cycle time - words, pages15ns
interview time20 ns
Voltage - Power supply1.425V ~ 1.575V
Operating temperature-40°C ~ 105°C(TC)
Installation typesurface mount type
Package/casing78-VFBGA
Supplier device packaging78-VFBGA(8x10.5)
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