maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6690S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690S as the low-side switch in a synchronous
rectifier is close to the performance of the FDS6690A in
parallel with a Schottky diode.
Features
•
10 A, 30 V.
R
DS(ON)
= 0.016
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.025
Ω
@ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky diode
Low gate charge (20 nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
Applications
•
DC/DC converter
•
Motor drives
•
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
10
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6690S
2000
Fairchild Semiconductor Corporation
Device
FDS6690S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS6690S Rev C(W)
FDS6690S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
===∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
23
500
100
–100
1
2.4
-6
13
20
19
50
26
1233
344
106
8
5
25
11
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 10 A,
11
5
4
3.5
(Note 2)
mV/°C
µA
nA
nA
V
mV/°C
16
25
26
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 10 A
I
D
= 8.5 A
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=10 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 5 V
I
D
= 10 A
3
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
A
S
pF
pF
pF
16
10
40
20
16
ns
ns
ns
ns
nC
nC
nC
A
V
nS
nC
Dynamic Characteristics
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 3.5 A
Voltage
Diode Reverse Recovery Time
I
F
= 10A
d
iF
/d
t
= 300 A/µs
Diode Reverse Recovery Charge
0.5
17
(Note 3)
0.7
12.5
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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