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IXYT85N120A4HV

Description
IGBT PT 1200 V 300 A 1150 W 表面贴装型 TO-268HV
CategoryDiscrete semiconductor    The transistor   
ManufacturerIXYS
Environmental Compliance
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IXYT85N120A4HV Overview

IGBT PT 1200 V 300 A 1150 W 表面贴装型 TO-268HV

IXYT85N120A4HV Parametric

Parameter NameAttribute value
category
MakerIXYS
series-
PackagePipe fittings
IGBT typePT
Voltage - collector-emitter breakdown (maximum)1200 V
Current - Collector (Ic) (maximum)300 A
Current - collector pulse (Icm)520 A
Vce(on) (maximum value) when Vge and Ic are different1.8V @ 15V,85A
Power - Max1150 W
switching energy4.9mJ(开),8.3mJ(关)
input typestandard
gate charge200 nC
Td (on/off) value at 25°C40ns/400ns
Test Conditions600V,60A,5欧姆,15V
Reverse recovery time (trr)40 ns
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount type
Package/casingTO-268-3, D³Pak (2 leads + tab), TO-268AA
Supplier device packagingTO-268HV
Basic product numberIXYT85
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