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BC846BHZGT116

Description
晶体管 - 双极 (BJT) - 单 65 V 120 mA 200 mW 表面贴装型 SST3
CategoryDiscrete semiconductor    The transistor   
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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晶体管 - 双极 (BJT) - 单 65 V 120 mA 200 mW 表面贴装型 SST3

BC846BHZGT116 Parametric

Parameter NameAttribute value
category
MakerROHM Semiconductor
seriesAutomotive, AEC-Q101
Package卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
Current - Collector (Ic) (maximum)120 mA
Voltage - collector-emitter breakdown (maximum)65 V
Vce saturation voltage drop (maximum value) when Ib and Ic are different400mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) (minimum value) when different Ic, Vce200 @ 2mA,5V
Power - Max200 mW
Operating temperature150°C(TJ)
Installation typesurface mount type
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSST3
Basic product numberBC846
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