DNB63
DNB63
Rectifier Diode
Replaces January 2000 version, DS4179-5.0
DS4179-6.0 August 2001
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
1500V
5794A
57000A
FEATURES
s
Double Side Cooling
s
High Surge Capability
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
1500
1400
1300
1200
1100
Conditions
DNB63 15
DNB63 14
DNB63 13
DNB63 12
DNB63 11
V
RSM
= V
RRM
+ 100V
Outline type code: DO200AD
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
1/7
www.dynexsemi.com
DNB63
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
5794
9101
7934
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
4230
6645
5468
A
A
A
T
case
= 100
o
C unless otherwise stated
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 100
o
C
T
case
= 100
o
C
T
case
= 100
o
C
4850
7615
6600
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 100
o
C
T
case
= 100
o
C
T
case
= 100
o
C
3540
5560
4500
A
A
A
2/7
www.dynexsemi.com
DNB63
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 190
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 190
o
C
V
R
= 0
Max.
52.0
13.5 x 10
6
57.0
16.2 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 45.0kN
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
40.0
190
190
48.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.013
0.021
0.034
0.003
0.006
200
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
3/7
www.dynexsemi.com
DNB63
CHARACTERISTICS
Symbol
V
FM
I
RRM
Q
S
I
RM
t
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
I
F
= 1000A, dI
RR
/dt = 50A/µs
Peak recovery current
T
case
= 175˚C, V
R
= 100V
Reverse recovery time
Threshold voltage
Slope resistance
At T
vj
= 190˚C
At T
vj
= 190˚C
-
-
-
20
0.75
0.046
-
600
A
µs
V
mΩ
Conditions
At 3000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 190
o
C
Min.
-
-
-
Max.
1.05
60
4000
Units
V
mA
µC
CURVES
10000
10000
Measured under pulse
conditions
6 phase
8000
Mean power dissipation - (W)
3 phase Half wave dc
8000
Instantaneous forward current, I
F
- (A)
6000
6000
T
j
= 190˚C
4000
4000
2000
2000
0
0.5
1.0
1.5
Instantaneous forward voltage, V
F
- (V)
2.0
0
0
2000
4000
6000
Mean forward current, I
F(AV)
- (A)
8000
Fig.2 Maximum (limit) forward characteristics
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.√I
F
Where
Fig.3 Dissipation curves
A = 0.517184
B = 0.035583
C = 4.94 x 10
–5
D = –0.0011
these values are valid for T
j
= 125˚C for I
F
500A to 10000A
4/7
www.dynexsemi.com
DNB63
140
0.1
I
2
t
=
Î
2
xt
2
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0210
0.0221
0.0250
0.0280
120
Peak half sine forward current - (kA)
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Anode side cooled
Thermal impedance - (˚C/W)
100
0.01
Double side cooled
80
15
I
2
t value - (A
2
s x 10
6
)
60
0.001
40
I
2
t
10
20
0
1
ms
10
1
2 3
5
10
20
5
50
0.0001
0.001
0.01
Cycles at 50Hz
Duration
0.1
1
Time - (s)
10
100
Fig.4 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
190˚C)
Fig.5 Maximum (limit) transient thermal impedance -
junction to case
5/7
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
