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S29GL064N90FAI010

Description
FLASH - NOR 存储器 IC 64Mb(8M x 8,4M x 16) 并联 90 ns 64-FBGA(13x11)
Categorysemiconductor    memory   
File Size891KB,78 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

S29GL064N90FAI010 Overview

FLASH - NOR 存储器 IC 64Mb(8M x 8,4M x 16) 并联 90 ns 64-FBGA(13x11)

S29GL064N90FAI010 Parametric

Parameter NameAttribute value
category
MakerCypress Semiconductor
seriesAutomotive, AEC-Q100, GL-N
Packagetray
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage64Mb(8M x 8,4M x 16)
memory interfacein parallel
Write cycle time - words, pages90ns
interview time90 ns
Voltage - Power supply2.7V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing64-LBGA
Supplier device packaging64-FBGA(13x11)
S29GL064N, S29GL032N
64 Mbit, 32 Mbit 3 V Page Mode
MirrorBit Flash
Distinctive Characteristics
Architectural Advantages
Single power supply operation
Manufactured on 110 nm MirrorBit process technology
Secured SiliconSector region
128-word/256-byte sector for permanent, secure identifica-
tion through an 8-word/16-byte random Electronic Serial
Number, accessible through a command sequence
Programmed and locked at the factory or by the customer
Flexible sector architecture
64Mb (uniform sector models): One hundred twenty-eight 32
Kword (64 KB) sectors
64 Mb (boot sector models): One hundred twenty-seven 32
Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors
32 Mb (uniform sector models): Sixty-four 32Kword (64 KB)
sectors
32 Mb (boot sector models): Sixty-three 32Kword (64 KB)
sectors + eight 4Kword (8KB) boot sectors
Enhanced VersatileI/O™ Control
All input levels (address, control, and DQ input levels) and
outputs are determined by voltage on V
IO
input. V
IO
range is
1.65 to V
CC
Compatibility with JEDEC standards
Provides pin out and software compatibility for single-power
supply flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Low power consumption
25 mA typical initial read current,
1 mA typical page read current
50 mA typical erase/program current
1 µA typical standby mode current
Package options
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA
48-ball fine-pitch BGA
Software and Hardware Features
Software features
Advanced Sector Protection: offers Persistent Sector Protec-
tion and Password Sector Protection
Program Suspend & Resume: read other sectors before pro-
gramming operation is completed
Erase Suspend & Resume: read/program other sectors be-
fore an erase operation is completed
Data# polling & toggle bits provide status
CFI (Common Flash Interface) compliant: allows host system
to identify and accommodate multiple flash devices
Unlock Bypass Program command reduces overall multi-
ple-word programming time
Hardware features
WP#/ACC input accelerates programming time (when high
voltage is applied) for greater throughput during system pro-
duction. Protects first or last sector regardless of sector pro-
tection settings on uniform sector models
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cy-
cle completion
Performance Characteristics
High performance
90 ns access time
8-word/16-byte page read buffer
25 ns page read time
16-word/32-byte write buffer which reduces overall program-
ming time for multiple-word updates
Cypress Semiconductor Corporation
Document Number: 001-98525 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 26, 2017
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