INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUY49P
DESCRIPTION
·High
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 200V(Min)
·High
Current Capability
APPLICATIONS
·Designed
for high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
250
V
V
CEO
Collector-Emitter Voltage
200
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
3.0
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
5.0
A
P
C
15
W
℃
T
J
150
T
stg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
8.33
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BUY49P
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 20mA; I
B
= 0
200
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1mA; I
E
= 0
250
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
6
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 500mA; I
B
= 50mA
0.2
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 500mA; I
B
= 50mA
1.1
V
I
CBO
Collector Cutoff Current
V
CB
= 200V; I
E
= 0
0.1
μA
h
FE-1
DC Current Cain
I
C
= 20mA; V
CE
= 2V
30
h
FE-2
DC Current Cain
I
C
= 20mA; V
CE
= 5V
40
h
FE-3
DC Current Cain
I
C
= 0.5mA; V
CE
= 5V
40
f
T
Current-Gain—Bandwidth Product
I
C
= 100mA; V
CE
= 10V
30
MHz
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
50
pF
Switching Times
t
on
Turn-On Time
I
C
= 0.5A; I
B1
= -I
B2
= 50mA;
V
CC
= 20V
0.8
μs
t
off
Turn-Off Time
2.5
μs
isc Website：www.iscsemi.cn
2
Analogue and Mixed Signal
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