Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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the references to Nexperia, as shown below.
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
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Thank you for your cooperation and
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Team Nexperia
BUK1M200-50SGTD
Quad channel logic level TOPFET
Rev. 01 — 31 March 2003
Product data
1. Product profile
1.1 Description
Quad temperature and overload protected power switch based on TOPFET™ Trench
technology in a 20-pin surface mount plastic package.
Product availability:
BUK1M200-50SGTD in SOT163-1 (SO20).
1.2 Features
s
s
s
s
Power TrenchMOS™
Overtemperature protection
Overload protection
Input-source voltage resets latched
protection circuitry.
s
Control of output stage and supply of
overload protection circuits derived
from input
s
s
s
s
5V logic compatible
Current trip protection
ESD protection for all pins
Overvoltage clamping for turn off of
inductive loads
s
Low operating input current permits
direct drive by micro-controller.
1.3 Applications
s
Low-side driver
s
Pulse Width Modulation
s
DC switching
s
General purpose switch for driving
lamps, motors, solenoids and heaters.
1.4 Quick reference data
Table 1:
Symbol
R
DSon
I
D
P
tot
T
j
V
DS
[1]
Quick reference data
Parameter
drain-source on-state resistance
drain current
total power dissipation
junction temperature
drain-source voltage
[1]
Min
-
-
-
-
-
Max
200
2.7
9.4
150
50
Unit
mΩ
A
W
°C
V
All devices active.
Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
2. Pinning information
dbook, halfpage
20
11
I1
D1
I2
D2
I3
D3
I4
D4
P
P
P
P
1
Top view
10
MGX361
S1
S2
S3
S4
MBL801
Fig 1. Pinning; SOT163-1 (SO20).
Fig 2. Symbol; Quad channel low-side TOPFET
TM
2.1 Pin description
Table 2:
Symbol
n.c.
D1
I1
D2
I2
D3
I3
D4
I4
S4
S3
S2
S1
Pin description
Pin
1, 11, 10, 20
2,19
3
4,17
5
6,15
7
8, 13
9
12
14
16
18
Description
not connected
drain 1
input 1
drain 2
input 2
drain 3
input 3
drain 4
input 4
source 4
source 3
source 2
source 1
9397 750 10955
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 31 March 2003
2 of 15
Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
3. Block diagram
2,19
CHANNEL 1
3
I1
RIG
D1
OVER
VOLTAGE
18
S1
gate
SHORT CIRCUIT
PROTECTION
OVER
TEMPERATURE
sense
VOLTAGE
REGULATOR
CONTROL
LOGIC
CROWBAR
AND
CURRENT
TRIP
4,17
D2
16
6,15
S2
5
I2
CHANNEL 2
internal circuitry
identical to
CHANNEL1
CHANNEL 3
internal circuitry
identical to
CHANNEL1
CHANNEL 4
internal circuitry
identical to
CHANNEL1
7
I3
D3
14
S3
8,13
9
I4
D4
12
S4
BUK1M200-50SGTD
03pb04
Fig 3. Elements of the quad channel TOPFET switch.
9397 750 10955
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 31 March 2003
3 of 15
Philips Semiconductors
BUK1M200-50SGTD
Quad channel logic level TOPFET
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
I
D
I
I
I
IMS
P
tot
T
stg
T
j
E
DS(CL)S
E
DS(CL)R
V
DS(prot)
I
S
V
esd
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Parameter
drain-source voltage
drain current
input current
non-repetitive peak input current
total power dissipation
storage temperature
junction temperature
non-repetitive drain-source clamping energy
repetitive drain-source clamping energy
protected drain-source voltage
source (diode forward) current
electrostatic discharge voltage
Conditions
[1]
Min Max
-
-
-
-
[4]
Unit
V
A
mA
mA
W
°C
mJ
mJ
V
A
kV
50
2.7
3
10
9.4
150
100
5
35
2
2
T
sp
=
25
°C;
Figure 5
clamping
t
p
≤
1 ms
T
sp
=
25
°C;
Figure 4
normal operation
T
amb
= 25
°C;
I
DM
≤
I
D(th)(trip)
; inductive
load
T
sp
≤
125
°C;
I
DM
= 1 A; f = 250 Hz
V
IS
≥
4 V
T
sp
≤
25
°C;
V
IS
= 0 V
C = 250 pF; R = 1.5 kΩ
[2][3]
-
-
-
-
-
-
-
−55
+150
°C
[5]
Overvoltage clamping
[6]
[3]
[3]
Overload protection
[7]
Reverse diode
Electrostatic discharge
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
Refer to overload protection characteristics.in
Table 5.
For a single active device.
For all devices active.
Not in an overload condition with drain current limiting.
At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current trip or by activating the overtemperature protection.
9397 750 10955
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 31 March 2003
4 of 15
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