EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

857-030-541-112

Description
位置 连接器
CategoryThe connector    Card edge connector   
File Size280KB,3 Pages
ManufacturerEDAC
Environmental Compliance
Download Datasheet Parametric View All

857-030-541-112 Online Shopping

Suppliers Part Number Price MOQ In stock  
857-030-541-112 - - View Buy Now

857-030-541-112 Overview

位置 连接器

857-030-541-112 Parametric

Parameter NameAttribute value
category
MakerEDAC
series*
PackageBulk
#idlemarket# MM32 development board exchange open source development board
I have an idle MM32 development board (with TFT LCD screen) and SWM320 development board, and I want to exchange them for M5Stack or other suitable open source development boards....
dcexpert Buy&Sell
Wince serial port driver receiving unstable problem
My current 2440 serial port driver has a problem. At low baud rate (9600), the received data is normal. At high baud rate (57600), it is abnormal. For example, the normal data should be AB, but the ac...
zhaozonghui Embedded System
IHS: Counterfeit ICs put hundreds of billions of dollars in market at risk
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 20:03[/i]According to the latest survey by market research firm IHS iSuppli, there are five most common counterfeit semiconductor componen...
wstt Mobile and portable
Lumen study notes 5 also talk about #include
This #include is used every day, but when learning the LM3S8962 development board, I have to say it, otherwise the program can't go on. If you don't understand the basics, you will be in vain.I use th...
ddllxxrr Microcontroller MCU
Basic C language programming specifications for microcontroller development
[align=left][font=宋体][size=12pt][font=宋体]This specification is written to improve the quality and maintainability of source programs, and ultimately improve the productivity of software products. This...
jingcheng Linux and Android
Since the signal that needs to be sampled is 0.01uA-10uA, is there any low-voltage MOS with Ids leakage current in nA or pA level?
Since the signal that needs to be sampled is 0.01uA-10uA, is there any low-voltage MOS with Ids leakage current in nA or pA level?...
QWE4562009 Integrated technical exchanges

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 391  2342  2238  1965  544  8  48  46  40  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号