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JANSP2N2222AUB

Description
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size367KB,6 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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JANSP2N2222AUB Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3

JANSP2N2222AUB Parametric

Parameter NameAttribute value
MakerMACOM
package instructionSMALL OUTLINE, R-CDSO-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-CDSO-N3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500; RH - 30K Rad(Si)
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)35 ns
Base Number Matches1
Radiation Hardened
NPN Silicon Switching Transistors
2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB
2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB
Features
Qualified to MIL-PRF-19500/255
Levels:
JANSM-3K Rads (Si)
JANSD-l0K Rads (Si)
JANSP-30K Rads (Si)
JANSL-50K Rads (Si)
JANSR-l00K Rads (Si)
TO-18 (TO-206AA), Surface mount UA & UB Packages
Absolute Maximum Ratings (Tc = +25 °C unless otherwise noted)
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation @ TA = +25 °C
2N2221A, L
2N2222A, L
2N2221UA
2N2222UA
2N2221UB
2N2222UB
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
Value
50
75
6.0
800
0.5
0.5
0.5
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
Top, Tstg
°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221UA
2N2221UB
2N2222A, L
2N2222UA
2N2222UB
R
θJC
325
325
325
°C/W
Symbol
Maximum
Units
Electrical Characteristics (TA = +15°C, unless otherwise noted)
OFF Characteristics
Collector - Emitter Breakdown Voltage
IC = 10 mAdc
Collector - Base Cutoff Current
VCB = 75 Vdc
VCB = 60 Vdc
Emitter - Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
Collector - Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc
Symbol
V(BR)CEO
ICBO1
ICBO2
IEBO1
IEBO2
ICES
Mimimum
50
---
Maximum
---
10
10
10
10
10
Units
Vdc
μAdc
nAdc
μAdc
nAdc
nAdc
---
---
---
Revision Date: 3/15/2014
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