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MSR820AJC288-12

Description
1T-SRAM 存储器 IC 576Mb(8M x 72) 并联 1.25 GHz 2.6 ns 324-PBGA(19x19)
Categorysemiconductor    memory   
ManufacturerMoSys Inc
Download Datasheet Parametric View All

MSR820AJC288-12 Overview

1T-SRAM 存储器 IC 576Mb(8M x 72) 并联 1.25 GHz 2.6 ns 324-PBGA(19x19)

MSR820AJC288-12 Parametric

Parameter NameAttribute value
category
MoSys, Inc.
-
tray
memory typeVolatile
memory formatSRAM
technology1T-SRAM
storage576Mb(8M x 72)
memory interfacein parallel
Clock frequency1.25 GHz
Write cycle time - words, pages-
interview time2.6 ns
Voltage - Power supply0.95V
Operating temperature0°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing324-BGA
Supplier device packaging324-PBGA(19x19)
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