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IS49RL36320-093FBL

Description
DDR DRAM,
Categorystorage    storage   
File Size6MB,122 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS49RL36320-093FBL Overview

DDR DRAM,

IS49RL36320-093FBL Parametric

Parameter NameAttribute value
MakerIntegrated Silicon Solution ( ISSI )
package instructionLBGA,
Reach Compliance Codeunknown
access modeMULTI BANK PAGE BURST
Other featuresAUTO REFRESH
JESD-30 codeS-PBGA-B168
length13.5 mm
memory density1207959552 bit
Memory IC TypeDDR DRAM
memory width36
Number of functions1
Number of ports1
Number of terminals168
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize32MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Maximum seat height1.25 mm
Maximum supply voltage (Vsup)1.42 V
Minimum supply voltage (Vsup)1.28 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13.5 mm
Base Number Matches1
1Gb: x18, x36 RLDRAM 3
Features
RLDRAM 3
Features
IS49RL18640-4 Meg x 18 x 16 Banks
IS49RL36320–2 Meg x 36 x 16 Banks
Options
• Clock cycle and
t
RC timing
1200
MHz DDR operation (2400 Mb/s/ball
data rate)
• Organization
64 Meg x 18, and 32 Meg x 36 common I/O (CIO)
16 banks
• 1.2V center-terminated push/pull I/O
2.5V V
EXT
, 1.35V V
DD
, 1.2V V
DDQ
(optional 1.35V V
DDQ
for 2400 operation only).
• SDR addressing
• Programmable READ/WRITE latency (RL/WL) and
burst length
• Data mask for WRITE commands
• Fr
x,
DK
x#)
and output data clocks (QK
x,
QK
x#)
• On-die DLL generates CK edge-aligned data and
64ms refresh (128K refresh per 64ms)
168-ball FBGA package
40 Ω or 60 Ω matched
impedance outputs
Integrated on-die termination (ODT)
Single or multibank writes
Extended operating range (200–1200 MHz)
Reduced
cycle time (
t
RC (MIN) = 6.67 - 8ns)
0.83
ns and
t
RC (MIN) =
6.67ns
(RL3-2400)
for -083F
0.83
ns and
t
RC (MIN) =
7.5ns
(RL3-2400)
for -083E
0.93
ns and
t
RC (MIN) =
7.5ns
(RL3-2133)
for -093F
0.93
ns and
t
RC (MIN) =
8ns
(RL3-2133)
for -093E
– 1.07ns and
t
RC (MIN) =
8ns
(RL3-1866)
for -107E
- 64 Meg x 18
- 32 Meg x 36
Operating Temperature
– Commercial (T
C
= 0° to +95°C)
– Industrial (T
C
= –40°C to +95°C)
Package
– 168-ball FBGA (Pb-free)
• READ training register
• Multiplexed and non-multiplexed addressing capa-
bilities
• Mirror function
• Output driver and ODT calibration
Post Package Repar - 1 row per half bank
• JTAG interface (IEEE 1149.1-2001)
Copyright © 2019 Integrated Silicon Solu on, Inc. All rights reserved. ISSI reserves the right to make changes to this specifica on and its products at any me without
no ce. ISSI assumes no liability arising out of the applica on or use of any informa on, products or services described herein. Customers are advised to obtain the
latest version of this device specifica on before relying on any published informa on and before placing orders for prodsu.c t
Integrated Silicon Solu on, Inc. does not recommend the use of any of its products in life support applica ons where the failure or malfunc on of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effec veness. Products are not authorized for use in such
applica ons unless Integrated Silicon Solu on, Inc. receives wri en assurance to its sa sfac on, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) poten al liability of Integrated Silicon Solu on, Inc is adequately protected under the circumstances
RLDRAM® is a registered trademark of Micron Technology, Inc.
www.issi.com
Rev.00C
09/18/2019
1

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Description DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM, DDR DRAM,
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
package instruction LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow unknow
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Other features AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH
JESD-30 code S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168
length 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm
memory density 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bit 1207959552 bi 1207959552 bi
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 36 36 36 36 36 36 36 36 36 36
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1 1
Number of terminals 168 168 168 168 168 168 168 168 168 168
word count 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words
character code 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C 95 °C
organize 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36 32MX36
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Maximum seat height 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm 1.25 mm
Maximum supply voltage (Vsup) 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V
Minimum supply voltage (Vsup) 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V 1.28 V
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER INDUSTRIAL OTHER INDUSTRIAL OTHER INDUSTRIAL OTHER INDUSTRIAL OTHER INDUSTRIAL
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm 13.5 mm
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