IRFR9210TRLPBF datasheet, PDF - EEWORLD Datasheet

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IRFR9210TRLPBF: DescriptionPower Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size921KB，9 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFR9210TRLPBF Overview

Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

IRFR9210TRLPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	LEAD FREE, DPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	300 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	1.9 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	7.6 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 95027

IRFR9210PbF

IRFU9210PbF

•

Lead-Free

www.irf.com

2/19/04

IRFR9210TRLPBF Related Products

	IRFR9210TRLPBF	IRFR9210TRRPBF	IRFR9210TRPBF
Description	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3	Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	TO-252AA	TO-252AA
package instruction	LEAD FREE, DPAK-3	LEAD FREE, DPAK-3	LEAD FREE, DPAK-3
Contacts	3	3	3
Reach Compliance Code	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	300 mJ	300 mJ	300 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	1.9 A	1.9 A	1.9 A
Maximum drain-source on-resistance	3 Ω	3 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	7.6 A	7.6 A	7.6 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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