|
IRF9641 |
IRF9642 |
IRF9643 |
RF1S9640 |
| Description |
11A, 150V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
9A, 200V, 0.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
9A, 150V, 0.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262AA, 3 PIN |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
| Maker |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
| Reach Compliance Code |
not_compliant |
not_compliant |
not_compliant |
_compli |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
| Avalanche Energy Efficiency Rating (Eas) |
790 mJ |
790 mJ |
790 mJ |
790 mJ |
| Shell connection |
DRAIN |
DRAIN |
DRAIN |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
150 V |
200 V |
150 V |
200 V |
| Maximum drain current (Abs) (ID) |
11 A |
9 A |
9 A |
11 A |
| Maximum drain current (ID) |
11 A |
9 A |
9 A |
11 A |
| Maximum drain-source on-resistance |
0.5 Ω |
0.7 Ω |
0.7 Ω |
0.5 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code |
TO-220AB |
TO-220AB |
TO-220AB |
TO-262AA |
| JESD-30 code |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSIP-T3 |
| JESD-609 code |
e0 |
e0 |
e0 |
e0 |
| Number of components |
1 |
1 |
1 |
1 |
| Number of terminals |
3 |
3 |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| Package form |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
IN-LINE |
| Polarity/channel type |
P-CHANNEL |
P-CHANNEL |
P-CHANNEL |
P-CHANNEL |
| Maximum power dissipation(Abs) |
125 W |
125 W |
125 W |
125 W |
| Maximum pulsed drain current (IDM) |
44 A |
36 A |
36 A |
44 A |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
| transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
| Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
- |
| Maximum power consumption environment |
125 W |
125 W |
125 W |
- |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
- |
| Maximum off time (toff) |
134 ns |
134 ns |
134 ns |
- |
| Maximum opening time (tons) |
90 ns |
90 ns |
90 ns |
- |