PD - 95489D
Features
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IRF2907ZPbF
IRF2907ZSPbF
IRF2907ZLPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 75V
R
DS(on)
= 4.5mΩ
G
S
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I
D
= 160A
∗
TO-220AB
D
2
Pak
IRF2907ZPbF IRF2907ZSPbF
TO-262
IRF2907ZLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Wirebond Limited)
Pulsed Drain Current
Max.
170
120
160 *
680
300
2.0
± 20
270
690
See Fig.12a,12b,15,16
-55 to + 175
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
k
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
l
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
HEXFET
®
is a registered trademark of International Rectifier.
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1
07/22/10
IRF2907Z/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
75
–––
–––
2.0
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.069
3.5
–––
–––
–––
–––
–––
–––
180
46
65
19
140
97
100
5.0
13
7500
970
510
3640
650
1020
–––
–––
4.5
4.0
–––
20
250
200
-200
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 75A
V V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 25V, I
D
= 75A
µA V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
I
D
= 75A
nC V
DS
= 60V
V
GS
= 10V
ns V
DD
= 38V
I
D
= 75A
R
G
= 2.5Ω
V
GS
= 10V
D
nH Between lead,
f
f
f
6mm (0.25in.)
from package
G
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
41
59
160*
680
1.3
61
89
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 38V
di/dt = 100A/µs
f
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L=0.095mH,
R
G
= 25Ω, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
I
SD
≤
75A, di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from
0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at
T
J
of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
∗
Calculated continuous current based on maximum
allowable junction temperature. Bond wire current limit is
160A.Note that current limitations arising from heating of
the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140
http://www.irf.com/
technical-info/appnotes/an-1140.pdf)
2
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IRF2907Z/S/LPbF
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
4.5V
10
4.5V
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
10
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs, Forward Transconductance (S)
200
T J = 25°C
150
ID, Drain-to-Source Current
(Α)
100
T J = 175°C
10
T J = 25°C
100
T J = 175°C
1
VDS = 25V
≤60µs
PULSE WIDTH
2
4
6
8
10
50
V DS = 10V
380µs PULSE WIDTH
0
0
25
50
75
100
125
150
ID,Drain-to-Source Current (A)
0.1
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRF2907Z/S/LPbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= 90A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 60V
VDS= 38V
VDS= 15V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T J = 175°C
100
1000
10
TJ = 25°C
10
Limited by package
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS, Drain-to-Source Voltage (V)
DC
1
VGS = 0V
1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2907Z/S/LPbF
180
160
140
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
Limited By Package
ID = 90A
VGS = 10V
2.0
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
1
τ
2
τ
0.01
Ri (°C/W)
τi
(sec)
0.279
0.000457
0.221
0.003019
Ci=
τi/Ri
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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