IRGS4630DPbF
IRGB4630DPbF
IRGP4630D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 30A, T
C
=100°C
t
SC
≥
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.65V @ I
C
= 18A
Applications
•
Appliance Drives
•
Inverters
•
UPS
G
E
C
C
C
G
G
C
G
E
E
C
G
IRGB4630DPbF
TO-220AC
E
C
G
IRGP4630DPbF
TO-247AC
E
C
G
IRGP4630D-EPbF
TO-247AD
n-channel
G
Gate
IRGS4630DPbF
D
2
Pak
C
Collector
E
Emitter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching
performance and high power capability
Positive V
CE (ON)
temperature coefficient and tight distribution
Excellent current sharing in parallel operation
of parameters
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
Package Type
2
IRGS4630DPBF
IRGB4630DPBF
IRGP4630DPBF
IRGP4630D-EPBF
Absolute Maximum Ratings
D Pak
TO-220AB
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Tube
50
Tube
25
Tube
25
Orderable Part Number
IRGS4630DPBF
IRGS4630DTRRPBF
IRGS4630DTRLPBF
IRGB4630DPBF
IRGP4630DPBF
IRGP4630D-EPBF
Max.
600
47
30
54
72
30
18
72
±20
±30
206
103
-40 to +175
300
10 lbf·in (1.1 N·m)
Units
V
A
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=15V
Clamped Inductive Load Current, V
GE
=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
V
W
C
Notes
through
are on page 7
1
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© 2013 International Rectifier
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October 29, 2013
IRGS/B/P4630D/EPbF
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D
2
Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220, TO-247)
Min.
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.5
40
80
Max.
0.73
0.78
2.0
2.1
–––
–––
–––
Units
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Collector-to-Emitter Breakdown Voltage
600
—
V
(BR)CES
—
0.40
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
—
1.65
—
2.05
Collector-to-Emitter Saturation Voltage
V
CE(on)
—
2.15
Gate Threshold Voltage
4.0
—
V
GE(th)
Threshold Voltage Temp. Coefficient
—
-18
ΔV
GE(th)
/ΔT
J
gfe
Forward Transconductance
—
12
—
2.0
I
CES
Collector-to-Emitter Leakage Current
—
550
Gate-to-Emitter Leakage Current
—
—
I
GES
—
2.3
V
FM
Diode Forward Voltage Drop
—
1.6
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Q
g
Total Gate Charge
—
35
Gate-to-Emitter Charge
—
10
Q
ge
Q
gc
Gate-to-Collector Charge
—
15
E
on
Turn-On Switching Loss
—
95
E
off
Turn-Off Switching Loss
—
350
Total Switching Loss
—
445
E
total
t
d(on)
Turn-On delay time
—
40
t
r
Rise time
—
25
t
d(off)
Turn-Off delay time
—
105
Fall time
—
25
t
f
E
on
Turn-On Switching Loss
—
285
E
off
Turn-Off Switching Loss
—
570
E
total
Total Switching Loss
—
855
Turn-On delay time
—
40
t
d(on)
t
r
Rise time
—
25
Turn-Off delay time
—
120
t
d(off)
t
f
Fall time
—
40
Input Capacitance
—
1040
C
ies
C
oes
Output Capacitance
—
87
C
res
Reverse Transfer Capacitance
—
32
RBSOA
SCSOA
Erec
t
rr
I
rr
2
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
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© 2013 International Rectifier
5.0
—
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 100µA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
1.95
I
C
= 18A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 18A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 18A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 500µA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 18A, PW = 80µs
25
µA V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±100
nA V
GE
= ±20V
3.3
V
I
F
= 18A
—
I
F
= 18A, T
J
= 175°C
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 18A
V
GE
= 15V
V
CC
= 400V
I
C
= 18A, V
CC
= 400V, V
GE
=15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH,
T
J
= 25°C
Energy losses include tail & diode
reverse recovery
I
C
= 18A, V
CC
= 400V, V
GE
=15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH,
T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 72A
V
CC
= 480V, Vp
≤
600V
R
G
= 22Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp
≤
600V
R
G
= 22Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 18A, V
GE
= 15V,
Rg = 22Ω, L = 200µH, L
S
= 150nH
October 29, 2013
Conditions
µJ
ns
µJ
ns
pF
FULL SQUARE
—
260
100
23
—
—
—
—
µs
µJ
ns
A
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IRGS/B/P4630D/EPbF
50
250
40
200
20
Ptot (W)
30
IC (A)
150
100
10
50
0
25
50
75
100
T C (°C)
125
150
175
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs.
Case Temperature
100
10µsec
10
IC (A)
IC (A)
10000
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
1msec
DC
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
90
80
70
60
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
90
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
80
70
60
50
40
30
20
10
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
0
1
2
3
4
VCE (V)
5
6
7
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
3
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© 2013 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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IRGS/B/P4630D/EPbF
90
80
70
60
ICE (A)
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
-40°c
25°C
175°C
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
IF (A)
50
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
V F (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
VCE (V)
VCE (V)
Fig. 8
- Typ. Diode Forward Voltage Drop
Characteristics
20
18
16
14
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 9.0A
ICE = 18A
ICE = 36A
12
10
8
6
4
2
0
ICE = 9.0A
ICE = 18A
ICE = 36A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
180
160
140
120
T J = 25°C
10
8
6
4
2
0
5
10
VGE (V)
ICE (A)
12
ICE = 9.0A
ICE = 18A
ICE = 36A
T J = 175°C
100
80
60
40
20
0
15
20
0
5
10
VGE (V)
15
20
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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IRGS/B/P4630D/EPbF
1400
1200
1000
1000
Swiching Time (ns)
Energy (µJ)
800
600
400
200
0
5
10
15
EOFF
tdOFF
100
tF
tdON
tR
EON
20
25
30
35
40
10
5
10
15
20
25
IC (A)
30
35
40
45
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V
900
800
700
600
Energy (µJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V
1000
EOFF
Swiching Time (ns)
tdOFF
100
tdON
500
400
300
200
100
0
0
25
50
75
100
125
EON
tF
tR
10
0
25
50
75
100
125
RG (Ω)
Rg (
Ω)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 18A; V
GE
= 15V
35
30
25
IRR (A)
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 18A; V
GE
= 15V
40
RG = 10Ω
RG = 22Ω
IRR (A)
35
30
25
20
15
10
5
0
0
10
RG = 47Ω
RG = 100Ω
20
15
10
5
0
20
IF (A)
30
40
0
25
50
75
100
125
Fig. 18
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
5
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© 2013 International Rectifier
Fig. 19
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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October 29, 2013
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