SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1605 2SB1605A
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Good linearity of h
FE
APPLICATIONS
·For low-voltage switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SB1605
V
CBO
Collector-base voltage
2SB1605A
2SB1605
V
CEO
Collector-emitter voltage
2SB1605A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
35
150
-55~150
Open collector
Open base
-80
-5
-3
-5
2
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
MAX
-60
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB1605
I
C
=-30mA ;I
B
=0
2SB1605A
I
C
=-3A ;I
B
=-0.375A
I
C
=-3A ; V
CE
=-4V
V
CE
=-60V; V
BE
=0
CONDITIONS
SYMBOL
2SB1605 2SB1605A
MIN
-60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-80
-1.2
-1.8
V
V
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
2SB1605
2SB1605A
2SB1605
2SB1605A
I
CES
Collector
cut-off current
-200
V
CE
=-80V; V
BE
=0
V
CE
=-30V; I
B
=0
-300
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-10V
70
10
30
-1
250
µA
I
CEO
Collector
cut-off current
µA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-1A; I
B1
=-I
B2
=-0.1A
0.5
1.2
0.3
µs
µs
µs
h
FE-1
Classifications
Q
70-150
P
120-250
2
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