DS2007SF
DS2007SF
Rectifier Diode
Replaces September 2001 version, DS4189-4.0
DS4189-4.1 December 2001
FEATURES
s
Double Side Cooling
s
High Surge Capability
KEY PARAMETERS
V
RRM
4000V
I
F(AV)
1594A
I
FSM
25000A
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DS2007SF40
4000
DS2007SF39
3900
DS2007SF38
3800
DS2007SF37
3700
DS2007SF36
3600
DS2007SF35
3500
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2007SF36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS2007SF
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
1594
2504
2295
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
1144
1797
1553
A
A
A
T
case
= 100
o
C unless otherwise stated
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
1225
1923
1720
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
-
-
820
1287
1050
A
A
A
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DS2007SF
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 150
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 150
o
C
V
R
= 0
Max.
20.0
2.0 x 10
6
25.0
3.125 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 19.5kN
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
18.0
150
175
22.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.022
0.038
0.052
0.004
0.008
160
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DS2007SF
CHARACTERISTICS
Symbol
V
FM
I
RRM
Q
S
I
RR
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak recovery current
Threshold voltage
Slope resistance
Conditions
At 3400A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
I
F
= 2000A, dI
RR
/dt = 3A/µs,
T
case
= 150˚C, V
R
= 100V
At T
vj
= 150˚C
At T
vj
= 150˚C
Min.
-
-
-
-
-
-
Max.
1.6
75
3500
110
0.82
0.29
Units
V
mA
µC
A
V
mΩ
CURVES
5000
Measured under pulse
conditions
4000
4000
Instantaneous forward current, I
F
- (A)
3000
Mean power dissipation - (W)
3000
T
j
= 25˚C
T
j
= 150˚C
2000
2000
1000
dc
Half wave
3 phase
6 phase
1000
0
0.5
1.0
1.5
2.0
0
0
Instantaneous forward voltage, V
F
- (V)
1000
2000
Mean forward current, I
F(AV)
- (A)
3000
Fig.2 Maximum (limit) forward characteristics
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.√I
F
Where
Fig.3 Dissipation curves
A = 0.658789
B = –0.01706
C = 0.000194
D = 0.010358
these values are valid for T
j
= 125˚C for I
F
500A to 5000A
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DS2007SF
10000
1000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 2000A
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 2000A
Reverse recovery current I
rr
- (A)
I
F
Q
S
dI
F
/dt
I
RM
Stored charge, Q
S
- (µC)
1000
100
100
0.1
1.0
10
100
10
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/µs)
Rate of decay of forward current, dI
F
/dt - (A/µs)
Fig.4 Total stored charge
40
^
I
2
t = I
2
x t
2
2.0
Fig.5 Maximum reverse recovery current
0.1
Thermal Impedance - junction to case - (˚C/W)
Anode side cooled
Peak half sine forward current - (kA)
30
I
2
t value - (A
2
s x 10
6
)
Double side cooled
0.01
20
I
2
t
1.5
10
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Single side
0.038
0.040
0.042
0.043
0
1
ms
10
1
2 3
5
10
20
1.0
50
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Cycles at 50Hz
Duration
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
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