Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA882
DESCRIPTION
・With
TO-3 package
・Excellent
Safe Operating Area
APPLICATIONS
・For
power and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-130
-130
-5
-7
-100
150
-65~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.52
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA882
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-30mA ;I
B
=0
-130
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.0
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=-7A ;I
B
=-1.5A
-3.0
V
V
BE
Base-emitter on voltage
I
C
=-3A ; V
CE
=-4V
-1.6
V
I
CBO
Collector cut-off current
V
CE
=-130V; I
B
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-4V
40
h
FE-2
DC current gain
I
C
=-3A ; V
CE
=-4V
20
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA882
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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