JMnic
Product Specification
Silicon PNP Power Transistors
2SB867
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・Complement
to type 2SD959
・Excellent
linearity of h
FE
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-130
-80
-7
-3
-6
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ;I
E
=0
I
C
=-2A; I
B
=-0.1A
I
C
=-2A; I
B
=-0.1A
V
CB
=-100V;I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-10V
45
60
30
MIN
-80
TYP.
2SB867
MAX
UNIT
V
-0.5
-1.5
-10
-50
V
V
μA
μA
260
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-0.5A
I
B1
=-I
B2
=-50mA
0.3
1.1
0.3
μs
μs
μs
h
FE-2
classifications
R
60-120
Q
90-180
P
130-260
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB867
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB867
4
JMnic
Product Specification
Silicon PNP Power Transistors
2SB867
5
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