SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB645
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For power switching and general
purpose applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-200
-200
-5
-15
-5
150
150
-65~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB645
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA ;I
B
=0
I
E
=-1mA ;I
C
=0
I
C
=-10A; I
B
=-1A
V
CB
=-200V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-10V
40
12
MIN
-200
-5
-3.0
-0.1
-0.1
140
MHz
TYP.
MAX
UNIT
V
V
V
mA
mA
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
h
FE
Classifications
R
40-80
O
70-140
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB645
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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