Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5632 2N5633 2N5634
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5632
V
CBO
Collector-base voltage
2N5633
2N5634
2N5632
V
CEO
Collector-emitter voltage
2N5633
2N5634
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
100
120
140
100
120
140
7
10
150
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.1
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5632
V
CEO(sus)
Collector-emitter
sustaining voltage
2N5633
2N5634
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N5632
I
CEO
Collector cut-off current
2N5633
2N5634
I
CEV
I
EBO
Collector cut-off current
(V
BE(off)
=1.5V)
Emitter cut-off current
2N5632
h
FE
DC current gain
2N5633
2N5634
f
T
Transition frequency
I
C
=1A ; V
CE
=20V
I
C
=5A ; V
CE
=5V
I
C
=7A; I
B
=0.7A
I
C
=10A ;I
B
=2A
I
C
=10A ;I
B
=2A
I
C
=5A ; V
CE
=5V
V
CE
=50V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=70V; I
B
=0
V
CE
=ratedV
CB
I
C
=0.2A ;I
B
=0
CONDITIONS
2N5632 2N5633 2N5634
MIN
100
120
140
TYP.
MAX
UNIT
V
1.0
3.0
2.5
1.5
V
V
V
V
1.0
mA
1.0
mA
5.0
1.0
25
20
15
1.0
100
80
60
MHz
mA
V
CE
=ratedV
CB
; T
C
=150℃
V
EB
=7V; I
C
=0
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5632 2N5633 2N5634
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
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