SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Complement to type 2SD1840
·Low collector saturation voltage
APPLICATIONS
·Motor drivers,relay drivers,converters
and other general high-current switching
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB1230
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current -peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
100
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-110
-100
-6
-15
-25
-5
3.0
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-5mA;R
BE
=<
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-6A; I
B
=-0.6A
I
C
=-6A; I
B
=-0.6A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1.5A ; V
CE
=-2V
I
C
=-6A ; V
CE
=-2V
50
20
MIN
-100
-110
-6
2SB1230
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE sat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
V
-0.8
-1.5
-100
-100
140
V
V
µA
µA
h
FE-1
Classifications
P
50-100
Q
70-140
2