EEWORLDEEWORLDEEWORLD

Part Number

Search

CSC2712L

Description
silicon planar epitaxial transistor
CategoryDiscrete semiconductor    The transistor   
File Size37KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Download Datasheet Parametric Compare View All

CSC2712L Overview

silicon planar epitaxial transistor

CSC2712L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCDIL[Continental Device India Pvt. Ltd.]
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)350
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)80 MHz
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
CSC2712
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (peak value)
Total power dissipation at T
amb
= 25°C
Junction temperature
D.C. current gain
–I
C
= 2 mA; –V
CE
= 6V
Transition frequency
I
C
= 1 mA; V
CE
= 10 V
Noise figure at R
S
= 10 KW
I
C
= 0.1 mA; V
CE
= 6V;
f = 1 kHz
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
h
FE
max.
max.
max.
max.
max.
max.
min.
max.
min.
60
50
5
150
150
150
70
700
V
V
V
mA
mW
°C
f
T
80 MHz
F
max
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3

CSC2712L Related Products

CSC2712L CSC2712G CSC2712BLL CSC2712BL CSC2712Y CSC2712GRG
Description silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor
Is it Rohs certified? incompatible incompatible - conform to conform to -
Maker CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] - CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] -
Reach Compliance Code compliant compliant - compliant compliant -
Maximum collector current (IC) 0.15 A 0.15 A - 0.15 A 0.15 A -
Configuration Single Single - Single SINGLE -
Minimum DC current gain (hFE) 350 200 - 350 120 -
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C -
Polarity/channel type NPN NPN - NPN NPN -
Maximum power dissipation(Abs) 0.15 W 0.15 W - 0.15 W 0.15 W -
surface mount YES YES - YES YES -
Nominal transition frequency (fT) 80 MHz 80 MHz - 80 MHz 80 MHz -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2760  1757  2004  133  1849  56  36  41  3  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号