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CSC2712Y

Description
silicon planar epitaxial transistor
CategoryDiscrete semiconductor    The transistor   
File Size37KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric Compare View All

CSC2712Y Overview

silicon planar epitaxial transistor

CSC2712Y Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
CSC2712
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (peak value)
Total power dissipation at T
amb
= 25°C
Junction temperature
D.C. current gain
–I
C
= 2 mA; –V
CE
= 6V
Transition frequency
I
C
= 1 mA; V
CE
= 10 V
Noise figure at R
S
= 10 KW
I
C
= 0.1 mA; V
CE
= 6V;
f = 1 kHz
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
h
FE
max.
max.
max.
max.
max.
max.
min.
max.
min.
60
50
5
150
150
150
70
700
V
V
V
mA
mW
°C
f
T
80 MHz
F
max
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3

CSC2712Y Related Products

CSC2712Y CSC2712G CSC2712L CSC2712BLL CSC2712BL CSC2712GRG
Description silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor silicon planar epitaxial transistor
Is it Rohs certified? conform to incompatible incompatible - conform to -
Maker CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] - CDIL[Continental Device India Pvt. Ltd.] -
Reach Compliance Code compliant compliant compliant - compliant -
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A - 0.15 A -
Configuration SINGLE Single Single - Single -
Minimum DC current gain (hFE) 120 200 350 - 350 -
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C -
Polarity/channel type NPN NPN NPN - NPN -
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W - 0.15 W -
surface mount YES YES YES - YES -
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz - 80 MHz -
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