SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC30S01G THRU RC30S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 30A
FEATURES
• Glass passivated junction chip
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
TECHNICAL
SPECIFICATION
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
a
=55
o
C)
(Note 2)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
(at rated DC blocking voltage)
T
a
=150
o
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
RC30S RC30S RC30S RC30S RC30S RC30S
UNITS
01G
02G
04G
06G
08G
10G
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
30
400
1.00
10
750
300
1
-50 to +150
o
A
A
V
µA
µA
pF
C/W
o
C
C
J
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 3) R
θ
(ja)
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
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