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2SD1022

Description
darlington transistor(5A npn)
CategoryDiscrete semiconductor    The transistor   
File Size273KB,8 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SD1022 Overview

darlington transistor(5A npn)

2SD1022 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)1500
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Humidity sensitivity level2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsCHOPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Maximum off time (toff)8000 ns
Maximum opening time (tons)2000 ns
VCEsat-Max1.5 V
Base Number Matches1
SHINDENGEN
Darlington Transistor
2SD1022
(T5L10)
5A NPN
OUTLINE DIMENSIONS
Case : TO-220
Unit : mm
RATINGS
●Absolute Maximum Ratings
Item
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
TOR
Conditions
Tc = 25℃
(Recommended torque : 0.3N½m)
Ratings
-55∼+150
+150
100
100
7
5
8
0.5
1
30
0.5
Unit
V
V
V
A
A
A
A
W
N½m
●Electrical Characteristics (Tc=25℃)
Item
Symbol
Collector Cutoff Current
I
CBO
I
CEO
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
V
CB
= 100V
V
CE
= 100V
V
EB
= 7V
V
CE
= 3V, I
C
= 3A
I
C
= 3A
I
B
= 3mA
Junction to case
V
CE
= 10V, I
C
= 0.5A
I
C
= 5A
I
B1
= I
B2
= 5mA
R
L
= 5Ω
V
BB2
= 4V
V
CE
(sat)
V
BE
(sat)
θjc
f
T
ton
ts
tf
Ratings
Unit
Max 0.1
mA
Max 0.1
Max 5
mA
Min 1,500
Max 30,000
Max 1.5
V
Max 2.0
V
Max 4.17 ℃/W
TYP 20
MHz
Max 2
Max 5
Max 3
μs
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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