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UN1210

Description
silicon npn epitaxial planer transistor
CategoryDiscrete semiconductor    The transistor   
File Size176KB,13 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UN1210 Overview

silicon npn epitaxial planer transistor

UN1210 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
Silicon NPN epitaxial planer transistor
For digital circuits
6.9±0.1
1.5
2.5±0.1
1.0
Unit: mm
s
Features
q
q
0.4
1.5 R0.9
R0.9
2.4±0.2 2.0±0.2
0.85
0.55±0.1
0.45±0.05
s
Resistance by Part Number
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
UN1211
UN1212
UN1213
UN1214
UN1215
UN1216
UN1217
UN1218
UN1219
UN1210
UN121D
UN121E
UN121F
UN121K
UN121L
(R
1
)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
3
2
1
2.5
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
1.25±0.05
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
4.1±0.2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
3.5±0.1
1.0
4.5±0.1
1.0±0.1
R
0.
7
1

UN1210 Related Products

UN1210 UN121D
Description silicon npn epitaxial planer transistor silicon npn epitaxial planer transistor
Maker Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 0.21
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 160 30
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.4 W 0.4 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz
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