APT5030AVR
500V 14.7A 0.300
Ω
POWER MOS V
®
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
TO-3
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-3 Package
G
D
S
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT5030AVR
UNIT
Volts
Amps
500
14.7
58.8
±30
±40
155
1.24
-55 to 150
300
14.7
30
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
500
14.7
0.300
25
250
±100
2
4
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
nA
Volts
050-5825 Rev A
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT5030AVR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
2650
360
150
110
19
45
10
11
43
7
3180
500
225
175
30
70
20
22
70
14
ns
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
14.7
58.8
1.3
410
6.5
(Body Diode)
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.80
30
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 8.89mH, R = 25Ω, Peak I = 14.7A
j
G
L
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.5
D=0.5
0.2
0.1
0.05
0.1
0.05
0.02
0.01
0.01
0.005
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-5825 Rev A
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
APT5030AVR
40
I
D
, DRAIN CURRENT (AMPERES)
VGS=6V, 10V & 15V
5.5V
30
I
D
, DRAIN CURRENT (AMPERES)
40
VGS=15V
VGS=10V
30
6V
5.5V
20
5V
20
5V
10
4.5V
10
4.5V
4V
0
50
100
150
200
250
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
40
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4V
0
4
8
12
16
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.8
V
GS
0
0
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
TJ = +125°C
1.6
30
1.4
VGS=10V
20
1.2
VGS=20V
1.0
10
TJ = +125°C
TJ = +25°C
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
15
0
TJ = -55°C
0.8
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
I = 0.5 I [Cont.]
D
D
GS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
, DRAIN CURRENT (AMPERES)
12
9
6
3
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
= 10V
0
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
-50
2.0
1.5
1.0
0.5
0.7
050-5825 Rev A
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT5030AVR
50
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
C, CAPACITANCE (pF)
10,000
5,000
Ciss
10
5
1mS
1,000
500
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
Coss
Crss
.1
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
200
100
50
TJ =+150°C
10
5
TJ =+25°C
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
VDS=100V
VDS=250V
12
VDS=400V
8
16
1
0.5
4
50
100
150
200
250
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0.1
TO-3 (TO-204AE) Package Outline
Seating
Plane
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
Source
16.64 (.655)
17.15 (.675)
38.61 (1.52)
39.12 (1.54)
22.23 (.875) Max.
1.47 (.058)
1.60 (.063)
(2-Places)
Drain
(Case)
29.90 (1.177)
30.40 (1.197)
1.52 (.060)
3.43 (.135)
6.35 (.250)
9.15 (.360)
7.92 (.312)
12.70 (.500)
5.21 (.205)
5.72 (.225)
10.67 (.420)
11.18 (.440)
25.15 (0.990)
26.67 (1.050)
050-5825 Rev A
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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