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HTIP112

Description
100V 4A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size53KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HTIP112 Overview

100V 4A NPN epitaxial planar transistor

Features

Product Name: 100V 4A NPN Epitaxial Planar Transistor


Product model: HTIP112


Product Description:


The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications.



parameter:


Type: NPN


BVCEO: 100V


IC: 4A


PD: 50W


hFE: MIN 1000


hFE: Max. -


VCE(sat): Max. 2.5V


RoHS: PF(lead-free)


Package: TO-220AB


HTIP112 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2004.11.19
Page No. : 1/5
HTIP112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP112 is designed for use in general purpose amplifier and low-speed
switching applications.
TO-220
Darlington Schematic
C
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ................................................................... -55 ~ +150
°C
Junction Temperature .......................................................... +150
°C
Maximum
B
R1
R2
E
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 50 W
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 2 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 100 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 100 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 5 V
I
C
Collector Current (Continue) .............................................................................................................................. 4 A
I
C
Collector Current (Peak)..................................................................................................................................... 6 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
Cob
Min.
100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
1
2
2
2.5
2.8
-
-
200
pF
Unit
V
mA
mA
mA
V
V
K
I
C
=1mA
V
CB
=100V
V
CE
=50V
V
EB
=5V
I
C
=2A, I
B
=8mA
I
C
=2A, V
CE
=4V
I
C
=1A, V
CE
=4V
I
C
=2A, V
CE
=4V
V
CB
=10V, f=0.1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HTIP112
HSMC Product Specification
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