VN3515L
VN4012L
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
350V
400V
R
DS(ON)
(max)
15Ω
12Ω
V
GS(th)
(max)
1.8V
1.8V
I
D(ON)
(min)
0.15A
0.15A
Order Number / Package
TO-92
VN3515L
VN4012L
Features
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Ease of paralleling
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
Integral Source-Drain diode
❏
High input impedance and high gain
❏
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Motor controls
❏
Converters
❏
Amplifiers
❏
Telecom Switching
❏
Power supply circuits
❏
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
SGD
TO-92
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN3515L/VN4012L
Thermal Characteristics
Package
VN3515L (TO-92)
VN4012L (TO-92)
*
I
D
(continuous)*
150mA
160mA
I
D
(pulsed)
600mA
650mA
Power Dissipation
@ T
C
= 25
°
C
1W
1W
θ
jc
°
C/W
125
125
θ
ja
°
C/W
170
170
I
DR
*
150mA
160mA
I
DRM
600mA
650mA
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
VN3515
VN4012
Min
350
400
0.6
1.8
10
1
100
I
D(ON)
R
DS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
VN3515
VN4012
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
125
0.15
0.3
9.5
17
9.5
17
350
110
30
10
20
20
65
65
1.2
V
V
GS
= 0V, I
SD
= 160mA
ns
V
DD
= 25V
I
D
= 100mA
R
GEN
= 25Ω
pF
V
DS
= 25V, V
GS
= 0V
f = 1MHz
15
35
12
30
m
Ω
µA
A
V
nA
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 0.8 Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
DS
= 10V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, TA = 125°C
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, TA = 125°C
V
DS
=15V, I
D
= 100mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
3. See TN2540 data sheet for characteristic curves.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
Ω
V
DD
R
L
OUTPUT
D.U.T.
11/12/01
Embedded System
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