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BC846S

Description
npn silicon AF transistor array (for AF input stages and driver applications high current gain)
CategoryDiscrete semiconductor    The transistor   
File Size46KB,6 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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npn silicon AF transistor array (for AF input stages and driver applications high current gain)

BC846S Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSOT-363
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
BC 846S
NPN Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with high matching in one package
4
5
6
2
1
3
VPS05604
Type
BC 846S
Marking Ordering Code
1Ds
Q62702-C2529
Pin Configuration
1/4=E1/E2
2/5=B1/B2
3/6=C2/C1
Package
SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation,
T
S
= 115 °C
Junction temperature
Storage temperature
Symbol
Value
65
80
80
6
100
200
250
150
- 65...+150
mW
°C
mA
Unit
V
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
1)
Junction - soldering point
R
thJA
R
thJS
≤275
≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
Semiconductor Group
1
1
Ma
1998-11-01
-12-1998
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