LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
MMUN2111LT1 Series
MMUN2111LT1
SERIES
3
1
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
PIN 1
BASE
(INPUT)
R
1
PIN 3
COLLECTOR
(OUTPUT)
R
2
PIN 2
EMITTER
(GROUND)
MARKINGDIAGRAM
A6x M
A6x = Device Marking
x
M
= A – L(See Page 2)
= Date Code
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of this
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
508 (Note 1.)
311 (Note 2.)
174 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
data sheet.
R
θJA
R
θJL
T
J
, T
stg
MMUN2111S-1/11
LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2111LT1
MMUN2111LT3
MMUN2112LT1
MMUN2112LT3
MMUN2113LT1
MMUN2113LT3
MMUN2114LT1
MMUN2114LT3
MMUN2115LT1 (Note 3.)
MMUN2115LT3
MMUN2116LT1 (Note 3.)
MMUN2116LT3
MMUN2130LT1 (Note 3.)
MMUN2130LT3
MMUN2131LT1 (Note 3.)
MMUN2131LT3
MMUN2132LT1 (Note 3.)
MMUN2132LT3
MMUN2133LT1 (Note 3.)
MMUN2133LT3
MMUN2134LT1 (Note 3.)
MMUN2134LT3
Package
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
Marking
A6A
A6B
A6C
A6D
A6E
A6F
A6G
A6H
A6J
A6K
A6L
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0 )
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
–
–
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 4.)
(I
C
= 2.0 mA, I
B
= 0)
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
MMUN2111S–2/11
LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA )
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
–
60
100
140
140
250
250
5.0
15
27
140
130
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2130LT1/MMUN2131LT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ )
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
MMUN2113LT1
V
CE(sat)
V
OL
–
–
–
–
–
–
–
–
–
–
–
V
OH
4.9
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
Vdc
(V
CC
=
5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ )
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ )
Vdc
(V
CC
MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ ) MMUN2130LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
–
0.8
0.055
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
–
1.0
0.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
–
1.2
0.185
k
Ω
Input Resistor
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
5. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
R
1
/R
2
MMUN2111S–3/11
LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
250
PD , POWER DISSIPATION (MILLIWATTS)
200
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = -25°C
75°C
0.1
25°C
150
100
50
0
-50
R
θJA
= 625°C/W
0
50
100
150
0.01
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
1000
h FE, DC CURRENT GAIN (NORMALIZED)
VCE = 10 V
4
Figure 2. VCE(sat) versus IC
100
TA = 75°C
25°C
-25°C
Cob , CAPACITANCE (pF)
3
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
100
Figure 4. Output Capacitance
75°C
25°C
TA = -25°C
100
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
10
1
10
TA = -25°C
25°C
75°C
0.1
1
0.01
0.001
0
1
2
VO = 5 V
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
MMUN2111S–4/11
LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
1000
h FE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
TA = -25°C
25°C
1
75°C
VCE = 10 V
TA = 75°C
100
25°C
-25°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
IC , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
100
75°C
25°C
TA = -25°C
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
1
0.01
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
MMUN2111S–5/11
stm32/stm8
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