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MMUN2134LT3

Description
bias resistor transistors
File Size140KB,7 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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MMUN2134LT3 Overview

bias resistor transistors

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
MMUN2111LT1 Series
MMUN2111LT1
SERIES
3
1
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
PIN 1
BASE
(INPUT)
R
1
PIN 3
COLLECTOR
(OUTPUT)
R
2
PIN 2
EMITTER
(GROUND)
MARKINGDIAGRAM
A6x M
A6x = Device Marking
x
M
= A – L(See Page 2)
= Date Code
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of this
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
508 (Note 1.)
311 (Note 2.)
174 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
data sheet.
R
θJA
R
θJL
T
J
, T
stg
MMUN2111S-1/11

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Description bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors bias resistor transistors
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