Pb Free Plating Product
ISSUED DATE :2005/03/18
REVISED DATE :2005/09/29B
GSS9936
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
50m
5A
The GSS9936 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
*DC-DC Application
*Dual N-channel Device
Description
Features
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0C
0.40
0.19
6.20
5.00
4.00
8C
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45 C
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
30
f 20
5
4
40
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Continuous Drain Current
3
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-amb
Value
62.5
Unit
/W
GSS9936
Page: 1/5
ISSUED DATE :2005/03/18
REVISED DATE :2005/09/29B
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
30
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.037
-
6
-
-
-
-
-
6.1
1.4
3.3
6.7
6.4
22.1
2.1
240
145
55
Max.
-
-
3.0
-
D
100
1
25
50
80
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
Unit
V
V/ :
V
S
nA
uA
uA
mŁ
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=5A
20V
V
GS
= D
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3.9A
I
D
=5A
V
DS
=15V
V
GS
=5V
V
DS
=15V
I
D
=1.5A
V
GS
=10V
R
G
=3.3 Ł
R
D
=10 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current (
Body Diode
)
Symbol
V
SD
I
S
Min.
-
-
Typ.
-
-
Max.
1.2
1.67
Unit
V
A
Test Conditions
I
S
=1.7A, V
GS
=0V, Tj=25 :
V
D
=V
G
=0V, V
S
=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 135 : /W when mounted on Min. copper pad.
GSS9936
Page: 2/5
ISSUED DATE :2005/03/18
REVISED DATE :2005/09/29B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSS9936
Fig 6. Type Power Dissipation
Page: 3/5
ISSUED DATE :2005/03/18
REVISED DATE :2005/09/29B
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS9936
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/5
ISSUED DATE :2005/03/18
REVISED DATE :2005/09/29B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS9936
Page: 5/5
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