AP60L02S/P
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
12mΩ
50A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60L02P) is available for low-profile applications.
G
D
G D
S
TO-263(S)
TO-220(P)
S
Rating
25
±
20
50
32
180
62.5
0.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-case
Rthj-amb
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218032
AP60L02S/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
25
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.037
Max. Units
-
-
12
26
3
-
1
25
±100
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
-
-
-
-
-
-
-
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=25A
V
GS
=4.5V, I
D
=20A
-
-
-
30
-
-
-
21
2.8
16
8
75
22
20
605
415
195
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=25A
V
DS
=25V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=
±
20V
I
D
=25A
V
DS
=20V
V
GS
=5V
V
DS
=15V
I
D
=20A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.26V
T
j
=25℃, I
S
=50A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
50
180
1.26
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60L02S/P
250
150
T
C
=25
o
C
200
T
C
=150
o
C
V
G
=10V
I
D
, Drain Current (A)
V
G
=10V
V
G
=8.0V
I
D
, Drain Current (A)
V
G
=8.0V
100
150
V
G
=6.0V
100
V
G
=6.0V
50
V
G
=4.0V
50
V
G
=4.0V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
26
1.8
24
I
D
=25A
T
c
=25
℃
I
D
=25A
1.6
V
G
=10V
22
20
18
Normalized R
DS(ON)
2
3
4
5
6
7
8
9
10
11
1.4
R
DS(ON)
(m
Ω
)
1.2
16
14
1
12
0.8
10
8
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP60L02S/P
60
70
50
60
50
I
D
, Drain Current (A)
40
40
30
P
D
(W)
25
50
75
100
125
150
30
20
20
10
10
0
0
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c
,Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
Normalized Thermal Response (R
thjc
)
100
10us
0.2
0.1
0.05
I
D
(A)
100us
0.1
0.02
P
DM
10
1ms
10ms
100ms
0.01
SINGLE PULSE
t
T
T
c
=25
o
C
Single Pulse
1
1
10
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
V
DS
(V)
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP60L02S/P
f=1.0MHz
16
10000
14
I
D
=25A
V
DS
=12V
V
DS
=16V
V
DS
=20V
C (pF)
V
GS
, Gate to Source Voltage (V)
12
10
8
1000
6
Ciss
Coss
4
Crss
2
0
0
10
20
30
40
50
100
1
6
11
16
21
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
T
j
=150
o
C
T
j
=25
o
C
V
GS(th)
(V)
2
I
S
(A)
1
1
0
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature(
o
C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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