Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR998CTN&P
thru
SDR9912CTN&P
100 AMP
800 -1200 Volts
80 nsec
ULTRA FAST COMMON
CATHODE RECTIFIER
TO-258
TO-259
DESIGNER’S DATA SHEET
Features:
•
•
•
•
•
•
•
•
•
•
Ultra Fast Recovery: 60 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Common Anode and Doubler versions:
SDR998CAN&P-SDR9912CAN&P
SDR998DN&P-SDR9912DN&P
•
TX, TXV, Space Level Screening Available Consult
Factory.
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR998CTN&P
SDR999CTN&P
SDR9910CTN&P
SDR9911CTN&P
SDR9912CTN&P
Symbol
V
RRM
V
RWM
V
R
Io
Value
800
900
1000
1100
1200
60
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)note 1, 2
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)note 2
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case, note 1
Note 1: Both legs tied together
Note 2: Package limited
Amps
I
FSM
550
Amps
Top & Tstg
-65 to +200
0.9
0.5
ºC
R
θJE
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR998CTN&P
thru
SDR9912CTN&P
Symbol
I
F
= 25Adc
I
F
= 50Adc
I
F
= 25Adc
I
F
= 25Adc
V
F1
V
F2
I
R1
I
R2
C
J
T
A
= 25ºC
t
rr
Electrical Characteristics
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, 300
µsec
pulse)
Instantaneous Forward Voltage Drop
(T
A
= -55ºC, 300
µsec
pulse)
(T
A
= 100ºC, 300
µsec
pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300
µsec
pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300
µsec
pulse minimum)
Junction Capacitance
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A)
Case Outline: TO-258
Pin1: Cathode
Pin2: Anode
Pin3: Anode
Min
––
––
––
––
––
––
Max
1.95
2.25
1.85
2.00
100
10
100
80
Units
Volts
Volts
µA
mA
pF
nsec
Case Outline: TO-259
Pin1: Cathode
Pin2: Anode
Pin3: Anode
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
PIN 3
DATA SHEET #: RU0119B
DOC
Microcontroller MCU
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