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SSM20N03P

Description
N-channel enhancement-mode power mosfet
File Size440KB,6 Pages
ManufacturerSilicon
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SSM20N03P Overview

N-channel enhancement-mode power mosfet

SSM20N03S,P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
D
BV
DSS
R
DS(ON)
I
D
30V
52m
Ω
20A
G
S
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM20N03P) is available for low-footprint applications.
G
D
G D
S
TO-263
TO-220
S
Units
V
V
A
A
A
W
W/
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±
20
20
13
58
31
0.25
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-case
Rthj-amb
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
62
Unit
℃/W
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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