Ordering number : ENN7910
2SK3101LS
N-Channel Silicon MOSFET
2SK3101LS
Features
•
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
400
±30
11
44
2.0
40
150
--55 to +150
69.1
11
Unit
V
V
A
A
W
W
°C
°C
mJ
A
*1 VDD=50V, L=1mH, IAV=11A
*2 L≤1mH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Conditions
ID=1mA, VGS=0
VDS=320V, VGS=0
VGS=
±30V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=15V
Ratings
min
400
1.0
±100
3.0
4.0
8.0
0.32
0.4
4.0
typ
max
Unit
V
m
A
n
A
V
S
Ω
Marking : K3101
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81004 TS IM TB-00000033 No.7910-1/5
2SK3101LS
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=11A
IS=11A, VGS=0
Ratings
min
typ
1850
480
240
19
35
140
41
58
0.9
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
V
Package Dimensions
unit : mm
2078C
10.0
3.2
4.5
2.8
3.5
7.2
16.1
16.0
3.6
0.9
1.2
1.2
0.75
1 2 3
14.0
0.7
1 : Gate
2 : Drain
3 : Source
SANYO
:
TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
VDD=200V
2.4
0.6
Unclamped Inductive Test Circuit
L
≥50Ω
VGS=15V
ID=8A
RL=25Ω
VOUT
DUT
D
PW=1µs
D.C.≤0.5%
10V
0V
50Ω
VDD
G
P.G
RGS
50Ω
2SK3101LS
S
No.7910-2/5
2SK3101LS
25
ID -- VDS
10V
30
ID -- VGS
VDS=10V
Tc=
--25
°C
20
15V
8V
25
25
°C
75
°C
Drain Current, ID -- A
Drain Current, ID -- A
20
15
7V
10
15
10
5
VGS=6V
5
0
0
1
2
3
4
5
6
7
8
9
10
0
0
5
10
15
20
IT06562
Drain-to-Source Voltage, VDS -- V
1.0
0.9
0.8
0.7
0.6
0.5
IT06561
1.2
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Tc=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
1.0
0.8
0.6
8A
0.4
0.3
0.2
4
6
8
0.4
ID=16A
1A
10
12
14
16
18
20
10V
S=
, VG
V
=8A
=15
ID
GS
V
8A,
I D=
0.2
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
2
y
fs -- ID
25
°
C
IT06563
7
Case Temperature, Tc --
°C
IT06564
VGS(off) -- Tc
VDS=10V
ID=1mA
Forward Transfer Admittance,
yfs
-- S
VDS=10V
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
6
Cutoff Voltage, VGS(off) -- V
3
5
7
2
3
5
°
C
--2
=
Tc
°
C
75
5
4
3
2
1
0
--100
2
3
5
7 1.0
2
10
--50
0
50
100
150
200
IT06566
Drain Current, ID -- A
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IT06565
1000
7
5
Case Temperature, Tc --
°C
IF -- VSD
SW Time -- ID
VDD=200V
VGS=15V
td (off)
VGS=0V
Switching Time, SW Time -- ns
Forward Current, IF -- A
3
2
100
7
5
3
2
10
7
5
0.1
tf
°
C
td(on)
tr
25
°
C
0.6
0.01
7
5
3
2
0.001
0.2
0.4
Tc=
75
--25
°
C
0.8
1.0
1.2
IT06567
2
3
5
7
1.0
2
3
5
7
10
2
3
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
IT07364
No.7910-3/5
2SK3101LS
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0
5
10
15
20
25
30
IT06568
2.5
0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
Ciss, Coss, Crss -- VDS
f=1MHz
12
VGS -- Qg
VDS=200V
ID=11A
Gate-to-Source Voltage, VGS -- V
Ciss
10
Ciss, Coss, Crss -- pF
Coss
8
Crss
6
4
2
Drain-to-Source Voltage, VDS -- V
100
7
5
3
2
Total Gate Charge, Qg -- nC
IT06569
ASO
Allowable Power Dissipation, PD -- W
IDP=44A
ID=11A
<1µs
10
µ
s
100
µ
s
PD -- Ta
2.0
Drain Current, ID -- A
10
7
5
3
2
1.0
5
3
3
2
0.1
7
5
3
2
0.01
1m
s
10m
DC
100 s
ope
ms
rat
ion
Operation in this
area is limited by RDS(on).
1.5
1.0
0.5
Tc=25°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
5
0
0
20
40
60
80
100
120
140
160
IT06570
1.0
Drain-to-Source Voltage, VDS -- V
45
Ambient Temperature, Ta --
°C
IT06572
PD -- Tc
Allowable Power Dissipation, PD -- W
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT06571
No.7910-4/5
2SK3101LS
Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode
between gate and source.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2004. Specifications and information herein are subject
to change without notice.
PS No.7910-5/5
Microcontroller MCU
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