Ordering number : ENN6788
2SK3092
N-Channel Silicon MOSFET
2SK3092
Ultrahigh-Speed Switching Applications
Features
•
•
Package Dimensions
unit : mm
2083B
[2SK3092]
6.5
5.0
4
1.5
Low ON-resistance.
Low Qg.
2.3
0.5
0.85
0.7
0.8
1.6
5.5
7.0
1.2
7.5
0.6
0.5
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3
2.3
SANYO : TP
Package Dimensions
unit : mm
2092B
[2SK3092]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
0.5
1
0.6
0.8
2
3
2.5
1.2
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3000 TS IM TA-3081 No.6788-1/4
2SK3092
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
400
±30
3
12
1.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
Conditions
ID=1mA, VGS=0
VDS=320V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, VGS=10V, ID=3A
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=3A, VGS=0
3.0
0.7
1.4
1.8
360
90
45
10
10
10
28
17
0.85
1.2
2.3
Ratings
min
400
1.0
±100
4.0
typ
max
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
nC
ns
ns
ns
ns
V
Marking : K3092
Switching Time Test Circuit
PW=1µs
D.C.≤0.5%
VGS=15V
VDD=200V
ID=1.5A
RL=133Ω
D
G
VOUT
P.G
RGS
50Ω
2SK3092
S
7
ID -- VDS
10V
6
ID -- VGS
VDS=10V
°
C
Tc= --25
6
15V
Drain Current, ID -- A
5
Drain Current, ID -- A
5
25
°C
4
8V
4
75
°C
3
3
7V
2
2
1
0
0
VGS=6V
1
0
10
20
30
IT01967
0
5
10
15
20
IT01968
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
No.6788-2/4
2SK3092
5
RDS(on) -- VGS
Tc=25°C
5.0
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
4
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID=3.0A
3
1.5A
1.0A
2
0V
=1
S
, VG
15V
.5A
1
S=
=
ID
, VG
.5A
1
I D=
1
0
0
2
4
6
8
10
12
14
16
18
20
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
7
IT01969
10
Case Temperature Tc --
°C
IT01970
VGS(off) -- Tc
Forward Transfer Admittance, |yfs| -- S
VDS=10V
ID=1mA
y
fs
-- ID
7
5
3
2
VDS=10V
6
Cutoff Voltage, VGS(off) -- V
5
4
1.0
7
5
3
2
3
°
C
--25
Tc=
C
75
°
C
25
°
2
1
0
--50
0
50
100
150
IT01971
Case Temperature, Tc --
°C
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.1
0.1
2
3
5
7
1.0
2
3
5
IF -- VSD
VGS=0
Drain Current, ID -- A
1000
7
5
10
IT01972
7
SW Time -- ID
VDD=200V
VGS=15V
Switching Time, SW Time -- ns
Forward Current, IF -- A
3
2
100
7
5
3
2
10
7
5
3
2
1.0
2
3
5
7
2
3
5
7
td (off
)
tf
td(on)
tr
0.4
5
°
C
25
°
C
--25
°
C
0.6
0.8
Tc=7
1.0
1.2
1.4
1.6
0.1
1.0
1000
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
IT01973
10
9
Drain Current, ID -- A
10
IT01974
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
VDS=200V
ID=3A
8
7
6
5
4
3
2
1
Ciss, Coss, Crss -- pF
3
2
100
7
5
3
2
Coss
Crss
10
0
5
10
15
20
25
30
IT01975
0
0
1
2
3
4
5
6
7
8
9
10
Drain-to-Source Voltage, VSD -- V
Total Gate Charge, Qg -- nC
IT01976
No.6788-3/4
2SK3092
100
7
5
3
2
Forward Bias A S O
Allowable Power Dissipation, PD -- W
1.4
PD -- Ta
IDP=12A
ID=3A
1.2
<10µs
10
0
µ
s
Drain Current, ID -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
1.0
1m
10
s
0.8
DC
Operation in this area
is limited by RDS(on).
Tc=25°C
Single pulse
2
3
5
7 10
2
3
ms
op
0.6
era
tio
n
0.4
0.2
0
0.01
1.0
5
7 100
2
3
5 7 1000
IT01977
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
35
Amibient Tamperature, Ta --
°C
IT01979
PD -- Tc
Allowable Power Dissipation, PD -- W
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT01978
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
PS No.6788-4/4
京公网安备 11010802033920号
EEWORLD
