Ordering number : ENA0830
2SK4119LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4119LS
Features
•
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *3
Avalanche Current *4
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature
SANYO’s ideal heat dissipation condition
PW≤10µs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)
Conditions
Ratings
400
±30
21
14.1
78
2.0
40
150
--55 to +150
581
21
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
*1
Shows chip capability
*2
Package limited
*3
VDD=99V, L=2mH, IAV=21A
*4
L≤2mH, single pulse
Marking : K4119
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60607QB TI IM TC-00000712 No. A0830-1/5
2SK4119LS
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=320V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=10.5A
ID=10.5A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=21A
VDS=200V, VGS=10V, ID=21A
VDS=200V, VGS=10V, ID=21A
IS=21A, VGS=0V
3
5
10
0.2
1200
310
65
30
115
131
57
47.8
7.4
29.4
0.9
1.2
0.26
Ratings
min
400
100
±100
5
typ
max
Unit
V
µ
A
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
3.5
7.2
16.0
16.1
0.9
1.2
0.75
3.6
1.2
14.0
0.7
1 2 3
2.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=10.5A
RL=19Ω
VDD=200V
0.6
Avalanche Resistance Test Circuit
L
≥50Ω
RG
D
PW=10µs
D.C.≤0.5%
VOUT
10V
0V
50Ω
2SK4119LS
VDD
G
2SK4119LS
P.G
RGS=50Ω
S
No. A0830-2/5
2SK4119LS
55
ID -- VDS
Tc=25°C
60
ID -- VGS
VDS=20V
Tc= --25°C
50
45
15V
55
50
10V
Drain Current, ID -- A
25°C
75°C
Drain Current, ID -- A
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
IT12521
45
40
35
30
25
20
15
10
8V
VGS=5V
6V
5
0
0
3
6
9
12
15
IT12522
Drain-to-Source Voltage, VDS -- V
1.4
Gate-to-Source Voltage, VGS -- V
0.6
RDS(on) -- VGS
RDS(on) -- Tc
ID=10.5A
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
1.2
0.5
1.0
0.4
0.8
0.3
0.6
=1
, ID
0V
=1
S
VG
A
0.5
0.2
0.4
0.2
0
6.0
Tc=75°C
25°C
0.1
--25
°C
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
3
IT12523
5
Case Temperature, Tc --
°C
IT12524
y
fs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
2
VDS=10V
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
10
7
5
3
2
C
25
°
°
C
-25
=-
Tc
C
75
°
Source Current, IS -- A
Tc=
75
°
C
25
°
C
0.4
1.0
7
5
3
2
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
--25
°
C
0.6
0.8
1.0
1.2
1.4
IT12526
Drain Current, ID -- A
2
IT12525
10000
7
5
3
2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
1000
VDD=200V
VGS=10V
Switching Time, SW Time -- ns
7
Ciss, Coss, Crss -- pF
5
3
2
100
7
5
3
2
10
0.1
Ciss
1000
7
5
3
2
100
7
5
3
2
10
td(off)
Coss
tr
td(on)
tf
Crss
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0
10
20
30
40
50
IT12528
Drain Current, ID -- A
IT12527
Drain-to-Source Voltage, VDS -- V
No. A0830-3/5
2SK4119LS
10
9
VGS -- Qg
VDS=200V
ID=21A
Drain Current, ID -- A
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=78A
IDc(*1)=21A
IDpack(*2)=14.1A
PW≤10
µ
s
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
10
m
DC
100
s
op
ms
era
tio
n
10
10
µ
s
0
µ
s
1m
s
0
10
20
30
40
50
IT12529
0.1
7
5
3
Tc=25
°
C
2
Single pulse
0.01
0.1 2 3 5 7 1.0
Operation in
this area is
limited by RDS(on).
*1.
Shows chip capability
*2.
SANYO’s ideal heat dissipation condition
2 3
5 7 10
2 3
5 7 100
2 3
5 7
IT12432
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
45
40
35
30
25
20
15
10
5
0
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
120
IT12368
Case Temperature, Tc --
°C
IT12433
EAS -- Ta
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°C
No. A0830-4/5
2SK4119LS
Note on usage : Since the 2SK4119LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0830-5/5
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