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2SC5120

Description
high frequency amplifier
CategoryDiscrete semiconductor    The transistor   
File Size26KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC5120 Overview

high frequency amplifier

2SC5120 Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)500 MHz
Base Number Matches1
2SC5120
Silicon NPN Epitaxial
Application
TO–126FM
High frequency amplifier
Features
• Excellent high frequency characteristics
f
T
= 500 MHz typ
• High voltage and low output capacitance
V
CEO
= 150 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
1
23
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
ic(peak)
P
C
Ratings
150
150
3
0.2
0.4
1.4
Unit
V
V
V
A
A
W
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8*
1
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Junction temperature
Storage temperature
Note: 1. Tc = 25°C
Tj
Tstg
150
–55 to +150
°C
°C
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