2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-767C (Z)
4th. Edition
February 1999
Features
•
Low on-resistance
R
DS(on)
= 6 mΩ typ.
•
Low drive current
•
4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
D
G
1 2
3
S
1. Gate
2. Drain
3. Source
2SK3140
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Note 3
Note 3
Note 1
Ratings
60
±20
60
240
60
50
214
35
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Pch
Note 2
Tch
Tstg
1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
2
2SK3140
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Symbol
V
(BR)DSS
I
GSS
I
DSS
Min
60
—
—
1.0
—
—
|y
fs
|
Ciss
Coss
45
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.0
8.0
75
7100
1000
280
125
25
25
60
250
540
320
1.0
80
Max
—
±0.1
10
2.5
7.5
12
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
I
F
= 60 A, V
GS
= 0
I
F
= 60 A, V
GS
= 0
diF/ dt = 50 A/
µs
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 30 A, V
GS
= 10 V
Note 1
I
D
= 30 A, V
GS
= 4 V
Note 1
I
D
= 30 A, V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 25 V
V
GS
= 10 V
I
D
= 60 A
V
GS
= 10 V, I
D
= 30 A
R
L
= 1Ω
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Note:
1. Pulse test
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK3140
Main Characteristics
Power vs. Temperature Derating
40
Pch (W)
Maximum Safe Operation Area
1000
I
D
(A)
300
100
30
10
3
1
0.3
DC
30
PW
10
=
10
10
0µ
µs
s
1m
m
s(
Channel Dissipation
Drain Current
20
Op
er
ati
o
s
sh
ot
)
)
n(
1
10
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
Tc
=
25
°C
0
50
100
150
Tc (°C)
200
Case Temperature
0.1
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
Typical Transfer Characteristics
100
V
GS
= 10 V
5V
4V
100
Pulse Test
(A)
I
D
(A)
80
3.5 V
80
V
DS
= 10 V
Pulse Test
60
I
D
Drain Current
60
Drain Current
40
3V
20
2.5 V
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
40
25°C
75°C
Tc = –25°C
0
1
2
3
Gate to Source Voltage
4
5
V
GS
(V)
20
4
2SK3140
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(m
Ω
)
2.0
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
1.6
1.2
20
10
5
V
GS
= 4 V
10 V
0.8
0.4
10 A
0
I
D
= 50 A
20 A
16
20
V
GS
(V)
2
1
12
4
8
Gate to Source Voltage
1
2
5 10 20
50 100 200
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I
D
= 50 A
12
4V
10, 20, 50 A
V
GS
= 10 V
10 A
20 A
Forward Transfer Admittance vs.
Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
Drain Current I
D
(A)
100
25 °C
75 °C
Tc = –25 °C
V
DS
= 10 V
Pulse Test
8
4
0
–50
0
50
100
150
200
Case Temperature Tc (°C)
5
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